Anisotropic MagnetoMemristance

Abstract In the last decade, nanoscale resistive devices with memory have been subject of intense study because their possible use in brain-inspired computing. However, operational endurance is one limiting factors adoption such technology. For this reason, we discuss emergence current-induced memristance magnetic materials, known for durability. We show analytically and numerically that a single ferromagnetic layer can possess GHz memristance, due to combination two factors: transfer angular momentum (Zhang-Li torque) anisotropic magnetoresistance (AMR). term resulting effect magneto-memristance (AMM). connect AMM topology magnetization state, within simple model one-dimensional annulus-shaped layer, confirming analytical results micromagnetic simulations permalloy. Our open new path towards realization single-layer memristive operating at frequencies.